digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20130117 BRY55 series silicon controlled rectifier available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum ratings rating symbol value unit peak repetitive forward and reverse blocking voltage (1) (r gk = 1000 ? , t j = 25-125c) BRY55-30 BRY55-60 BRY55-100 BRY55-200 BRY55-400 BRY55-500 BRY55-600 v rrm , v drm 30 60 100 200 400 500 600 volts forward current rms (all conduction angles) i t(rms) 0.8 amps peak forward surge current , t a = 25c (1/2 cycle, sine wave, 60hz) i tsm 8 amps circuit fusing considerations , t a = 25c (t = 8.3ms) i 2 t 0.15 a 2 s forward peak gate power , t a = 25c p gm 0.1 watts forward peak gate current , t a = 25c (300s, 120 pps) i gfm 1 amps operating junction temperature range @ rated v rrm and v drm t j -40 to +125 c storage temperature range t stg -40 to +150 c lead solder temperature (<1.5mm from case, 10s max) +230 c note 1: v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate vol tage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. thermal characteristics characteristic symbol maximum unit thermal resistance, junction to case r ? jc 75 c/w thermal resistance, junction to ambient r ? ja 200 c/w electrical characteristics (t c 25c, r gk = 1000 ? unless otherwise noted) characteristic symbol min. max. unit peak forward blocking current (v d = rated v drm @ t c = 125c) i drm - 100 a peak reverse blocking current (v r = rated v rrm @ t c = 125c) i rrm - 100 a forward ?on? voltage (2) i tm = 1a peak @ t a = 25c) v tm - 1.7 volts gate trigger current (continuous dc) (3) (anode voltage = 7vdc, r l = 100 ? ) i gt - 200 a gate trigger voltage (continuous dc) (anode voltage = 7vdc, r l = 100 ? ) (anode voltage = rated v drm , r l = 100 ? ) t c = 25c t c = -40c t c = 125c v gt - - 0.1 0.8 1.2 - volts holding current (anode voltage = 7vdc, in itiating curre nt = 20ma) t c = 25c t c = -40c i h - - 5 10 ma note 2: forward current applied for 1ms maximum duration, duty cycle 1%. note 3: r gk current is not included in measurement.
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 BRY55 series silicon controlled rectifier mechanical characteristics case to-92 marking body painted, alpha-numeric pin out see below to-92 inches millimeters min max min max a 0.175 0.205 4.450 5.200 b 0.170 0.210 4.320 5.330 c 0.125 0.165 3.180 4.190 d 0.016 0.022 0.410 0.550 f 0.016 0.019 0.410 0.480 g 0.045 0.055 1.150 1.390 h 0.095 0.105 2.420 2.660 j 0.015 0.020 0.390 0.500 k 0.500 - 12.700 - l 0.250 - 6.350 - n 0.080 0.105 2.040 2.660 p - 0.100 - 2.540 r 0.115 - 2.930 - v 0.135 - 3.430 - fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20130117
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